features ? wide current range ? high voltage ratings up to 4000 v ? h igh surge current capabilities ? diffused junction ? h ockey puk version typical applications ? converters ? power supplies ? machine tool controls ? high power drives ? medium traction applications international standard recovery diode (g) v rrm ( v ) v rsm ( v ) 1 www.rectifierindia.com april 2011 DS1107SG device type DS1107SG4040 current ratings t case = 75 o c unless otherwise stated DS1107SG3838 DS1107SG3636 4000 3800 3600 39 00 3700 4100 symbol parameter conditions double side cooled i f(av) mean forward current i f(rms) rms value i f continuous (direct) forward current single side cooled (anode side) i f(av) mean forward current i f(rms) rms value i f continuous (direct) forward current units max. half wave resistive load 1121 a - 1761 a - 1608 a half wave resistive load 734 a - 1154 a - 989 a technical data a l l d a t a s h e e t . c o m
international 2 www.rectifierindia.com april 2011 symbol parameter conditions double side cooled i f(av) mean forward current i f(rms) rms value i f continuous (direct) forward current single side cooled (anode side) i f(av) mean forward current i f(rms) rms value i f continuous (direct) forward current units max. half wave resistive load 870 a - 1366 a - 1280 a half wave resistive load 550 a - 863 a - 740 a t case = 100 o c unless otherwise stated surge ratings conditions 10ms half sine; t case = 150 o c v r = 50% v rrm - 1/4 sine 10ms half sine; t case = 150 o c v r = 0 max. units symbol parameter i fsm surge (non-repetitive) forward current i 2 ti 2 t for fusing i fsm surge (non-repetitive) forward current i 2 t i 2 t for fusing a 2 s 15.0 ka 0.72x 10 6 a 2 s 12.0 ka 1.125 x 10 6 thermal and mechanical data dc conditions min. max. units o c/w - 0.064 anode dc clamping force 12.0kn with mounting compound thermal resistance - case to heatsink r th(c-h) 0.008 double side - 150 o c t vj virtual junction temperature t stg storage temperature range reverse (blocking) single side thermal resistance - junction to case r th(j-c) single side cooled symbol parameter -55 175 o c - forward (conducting) - 160 o c - 0.016 o c/w o c/w cathode dc - 0.064 o c/w double side cooled - 0.032 o c/w clamping force - 11.5 13.5 kn standard recovery diode DS1107SG a l l d a t a s h e e t . c o m
international 3 www.rectifierindia.com april 2011 characteristics forward voltage peak reverse current parameter c 2000 at t vj = 150?c - q s total stored charge i f = 1000a, di rr /dt = 3a/ s t case = 150?c, v r = 100v symbol v fm i rrm i rr reverse recovery current v to threshold voltage r t slope resistance 0.44 m at t vj = 150?c - 0.75 v -80a - at v rrm , t case = 150 o c- 5 0 m a - 1.6 v at 1800a peak, t case = 25 o c conditions min. max. units curves fig.2 maximum (limit) forward characteristics fig.3 dissipation curves v fm equation:- v fm = a + bln (i f ) + c.i f +d. i f where a = 0.616461 b = ?.01452 c = 0.000349 d = 0.009952 these values are valid for t j = 125?c for i f 500a to 2500a 0.5 1.0 1.5 2.0 instantaneous forward voltage, v f - (v) 0 500 1000 1500 2000 2500 instantaneous forward current, i f - (a) measured under pulse conditions t j = 25?c t j = 150?c 0 500 1000 1500 2000 mean forward current, i f(av) - (a) 0 500 1000 1500 2000 2500 mean power dissipation - (w) dc half wave 3 phase 6 phase standard recovery diode DS1107SG a l l d a t a s h e e t . c o m
international 4 www.rectifierindia.com april 2011 fig.4 total stored charge fig.5 maximum reverse recovery current fig.7 maximum (limit) transient thermal impedance - junction to case fig.6 surge (non-repetitive) forward current vs time (with 50% v rrm at t case 150?c) 0.1 0.01 0.001 thermal impedance - junction to case, r th(j?) - (?c/w) 0.001 0.01 0.1 1.0 10 time - (s) anode side cooled double side cooled conduction d.c. halfwave 3 phase 120? 6 phase 60? effective thermal resistance junction to case ?c/w double side 0.032 0.034 0.044 0.057 single side 0.064 0.066 0.076 0.089 0.1 1.0 10 100 rate of decay of on-state current, di f /dt - (a/ s) 10000 1000 100 stored charge, q s - ( c) conditions: t j = 150?c v r = 100v i f = 1000a i rm i f di f /dt q s 0.1 1.0 10 100 rate of decay of forward current, di f /dt - (a/ s) 1000 100 10 reverse recovery current, i rr - (a) conditions: t j = 150?c v r = 100v i f = 1000a 11 0 1 2 3 5 1 0 2 0 5 0 0 5 10 15 20 25 30 500 550 450 600 650 i 2 t value - (a 2 s x 10 3 ) ms cycles at 50hz duration peak half sine forward current - (ka) i 2 t = 2 x t 2 700 750 i 2 t standard recovery diode DS1107SG a l l d a t a s h e e t . c o m
international 5 www.rectifierindia.com april 2011 package outline all dimensions are in mm. hole 3.6 x 2.0 deep (in both electrodes) 34 nom 27.0 25.4 cathode anode 34 nom 58.5 max nominal weight: 250g clamping force: 12kn 10% package outine type code: g standard recovery diode DS1107SG plot no 151, udyog kendra, extn.-ii, ecotech-iii, greater noida-201306 toll free no.: 1800 3070 9989 , fax : 011-27491404 e-mail : insel@rectifierindia.com, sales@rectifierindia.com insel rectifiers (india) pvt. ltd. (an iso 9001:20 15, iso 14001:2015 certified company) a l l d a t a s h e e t . c o m
|
